Project title: BJT device DOE structures DC/AC & SOA tests. Internship aims to determine which BJT DOE parameters yield highest Ft/Fmax and SOA. Intern will write a software program to summarize DC/AC & SOA results and apply semiconductor device physics knowledge. Requires actively pursuing a Bachelor’s Degree in Electrical/Electronic Engineering; 20-24 week credit-bearing internship from June 2026 onwards; includes mentorship, professional development opportunities, and safety responsibilities. Location: SG Woodlands.
Details
- Work type
- Onsite
- Remote eligible
- No
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