Intern - ADV DRAM Process Integration Engineer at Micron in Boise, ID. Works in a 300mm R&D facility focusing on 3D DRAM process integration, device components such as charge storage devices and thin-film transistors, and collaboration with process development, product engineering, design, probe, and yield enhancement teams. Requires current student; PhD candidate in Materials Science and Electrical Engineering preferred (physics or chemical engineering acceptable) and cannot graduate before September 2027. Responsibilities include designing and running experiments, analyzing data to optimize device performance and reliability, and driving cross-functional solutions.
What they are looking for
Details
- Work type
- Onsite
- Remote eligible
- No
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