Hitachi

R&D Internship in SiC Power Devices 80 - 100% (f/m/d)

Hitachi

Lenzburg · Posted Feb 15

Research Onsite
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R&D internship focusing on SiC power-device design and TCAD simulation for SiC MOSFETs; on-site in Lenzburg, Switzerland; requires Master’s degree in Electrical Engineering, Physics, or Materials Science; fluent in English; remote work not offered.

What they are looking for

Tcad Sic device simulation Sic device physics Semiconductor fabrication Data interpretation

Details

Work type
Onsite
Remote eligible
No

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